| abstract |
A light emitting device according to an embodiment includes a first conductive semiconductor layer; A second conductivity type semiconductor layer; And an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the active layer has a plurality of well layers and a plurality of barrier layers having a larger energy band gap than the well layers, stacked and, and satisfies a range of 1.2d 2 ≤d 1 ≤2d 2 when the thickness of each of the well layer d 1, wherein the barrier layers each having a thickness d 2 d. |