| abstract |
The present invention provides a semiconductor device capable of suppressing an increase in oxygen deficiency in an oxide semiconductor layer. Further, a semiconductor device having good electrical characteristics is provided. In addition, a highly reliable semiconductor device is provided. A semiconductor device comprising an oxide semiconductor layer in a channel formation region, comprising: an oxide insulating film provided in contact with a lower side of an oxide semiconductor layer and a gate insulating film provided in contact with an upper side of an oxide semiconductor layer in the oxide insulating film or the gate insulating film; Oxygen is supplied into the oxide semiconductor layer. In addition, by using conductive nitride in the metal film used for the source electrode layer and the drain electrode layer, diffusion of oxygen into the metal film is suppressed. |