| abstract |
The present invention discloses a thin film using a silicon zinc oxide tin thin film using a silicon zinc tin oxide thin film (Si-Zn-SnO; SZTO) as a channel oxide. According to the present invention, the zinc silicate tin oxide thin film may be formed by a pulsed laser deposition (PLD) process, a thermal deposition process, an electron beam deposition process, a printing process, a wet solution process, and a sputtering process. The electron mobility and threshold voltage can be controlled according to the content of silicon. By forming a channel layer which does not contain expensive indium, a manufacturing cost can be reduced to realize a low-cost thin film transistor . |