http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140041950-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_781c429e4e20536916ff74dcbe1b5417 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-6562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3293 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-457 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-63416 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-62695 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B5-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2008-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5630afa6ad0f8c9d994ee70670a3310 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcccec704e64036662a0173cf3aaf037 |
| publicationDate | 2014-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140041950-A |
| titleOfInvention | Amorphous composite oxide film, crystalline composite oxide film, amorphous composite oxide film production method, crystalline composite oxide film production method and composite oxide sintered body |
| abstract | Substantially composed of indium, tin, magnesium and oxygen, tin is in the ratio of 5 to 15% by the atomic ratio of Sn / (In + Sn + Mg), and magnesium is in the atomic ratio of Mg / (In + Sn + Mg) It is contained in the ratio of 0.1 to 2.0%, remainder is an amorphous film which consists of indium and oxygen, and annealing at the temperature of 260 degreeC or less, crystallizes a film, and the resistivity of a film becomes 0.4 m (ohm) or less, It is characterized by the above-mentioned. That's it. ITO-based thin films used for display electrodes for flat panel displays, etc. are sputtered into a film without adding water at the time of film-forming by unheating a substrate, and an amorphous ITO-based film is obtained, and the ITO-based film is not more than 260 ° C. An object of the present invention is to provide an ITO-based film having a characteristic of crystallization by annealing rather than high temperature and having low resistivity after crystallization, a method for producing the film, and a sintered body for producing the film. |
| priorityDate | 2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.