| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-1673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate |
2012-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f62feb0a225b925a5619122a5eaf4af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da0c7dd40657c92746691b282151c672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_058afd2d820ee00a0bf1a746ad61943f |
| publicationDate |
2014-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140037111-A |
| titleOfInvention |
Voltage controlled magnetic anisotropic switch and magnetic electrical memory |
| abstract |
Voltage controlled magnetic tunnel junctions and memory devices are described that provide effective high speed switching of non-volatile magnetic devices at high cell density. An implementation is described that provides an inclusive range of voltage control alternatives in the in-plane vertical magnetization, bidirectionally switched magnetization and control of domain wall dynamics. |
| priorityDate |
2011-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |