http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140035834-A

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filingDate 2013-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f094cc9b8191e358d30e992b465b84c
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publicationDate 2014-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20140035834-A
titleOfInvention Laminated structure, member for semiconductor manufacturing apparatus, and manufacturing method of laminated structure
abstract The laminated structure 10 of this invention contains the 1st structure 12 which has magnesium-aluminum oxynitride as the main phase, and the grain boundary phase of the rare earth aluminum composite oxide which has aluminum nitride as the main phase, and has a garnet type crystal structure. A second structure 14 and a reaction layer 15 present between the first structure 12 and the second structure 14, wherein the grain boundary phase 18 of the rare earth aluminum composite oxide is a thin layer of aluminum nitride is provided. The thickness of the reaction layer 15 of this laminated structure 10 is 150 micrometers or less. In addition, in the laminated structure 10, the difference of the linear thermal expansion coefficient of the 1st structure 12 and the 2nd structure 14 is 0.3 ppm / K or less. In the laminated structure 10, when the second structure 14 is fired, the grain boundary phase 18 is diffused to the first structure 12 side, so that the grain boundary phase 18 becomes thin by the diffusion interface 17. The reaction layer 15 is formed.
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