abstract |
Provided are a semiconductor laminate having a low electrical resistance in the thickness direction, a method of manufacturing the same, and a semiconductor device including the semiconductor laminate. The Ga 2 O 3 substrate 2 having the surface where oxygen is arranged in a hexagonal lattice, the AlN buffer layer 3 on the Ga 2 O 3 substrate 2, and the nitride semiconductor layer 4 on the AlN buffer layer 3 It provides the semiconductor laminated body 1 containing. |