http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140026891-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
| filingDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_582ed222210aa4b660c2b59567954280 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_833c957b24b19919906248883cc656e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c88be7afc51cb29256481d91a2beefc |
| publicationDate | 2014-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20140026891-A |
| titleOfInvention | Light emitting devices, light emitting device packages and lighting systems |
| abstract | The light emitting device according to the embodiment may include a first conductive semiconductor layer; A second conductive semiconductor layer on the first conductive semiconductor layer; And an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, the active layer including a plurality of well layers and a plurality of barrier layers, wherein the plurality of barrier layers include: an adjacent first well layer; A first barrier layer disposed between the second well layers, wherein the first barrier layer includes a binary compound semiconductor having aluminum between the first well layer and the second barrier layer; The third barrier layer includes a binary compound semiconductor having aluminum between the second barrier layer and the second well layer, and the second barrier layer is disposed between the first barrier layer and the third barrier layer. Ternary or quaternary compound semiconductors. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160100426-A |
| priorityDate | 2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.