| abstract |
The present invention aims to provide a gas barrier film having excellent gas barrier properties and high durability, a method for producing the same, and an electronic device using the same. The gas barrier film of the present invention is a gas barrier film in which two or more gas barrier layers containing at least Si and O and N are laminated on a substrate and the composition distribution in the thickness direction in the entire gas barrier layer is And has a region of not less than 20 nm continuous in the thickness direction satisfying the composition range of the following (A) and an area of not less than 50 nm continuous in the thickness direction satisfying the composition range of (B) below. (A) When the composition of the gas barrier layer is represented by SiOwNx, w? 0.8, x? 0.3 and 2w + 3x? 4. (B) When the composition of the gas barrier layer is represented by SiOyNz, 0 < y? 0.55, z? 0.55 and 2y + 3z? |