abstract |
The present invention relates to a precursor for depositing a GST thin film, the precursor is represented by the following formula (1). [Chemical Formula 1] (In Formula 1, R1 is C1 ~ C6 alkyl, R2 is C1 ~ C6 alkyl, R3 is C1 ~ C6 alkyl, M is Se or Te) The precursor can simplify the deposition process and increase the deposition efficiency. |