Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F2200-171 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F2200-451 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F2200-294 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-204 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-0542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-706 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04B1-036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-0571 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-19 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04B1-40 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B1-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
filingDate |
2012-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76c99da370984994aadb852834b6c5ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82cf143c6ae4e3d5f08627c19ae8c2ee |
publicationDate |
2014-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20140010102-A |
titleOfInvention |
Semiconductor device, manufacturing method and mobile phone |
abstract |
For example, in a mobile communication device typified by a mobile phone, in the case where the transmission filter and the reception filter are formed on the same semiconductor substrate as the power amplifier, the influence of the heat from the power amplifier on the transmission filter and the reception filter is as much as possible. It is possible to reduce and provide a technique capable of maintaining filter characteristics (electrical characteristics) of a transmission filter and a reception filter. The high thermal conductivity film HCF is formed on the passivation film PAS in the entire region of the semiconductor substrate 1S including the region AR1 in which the LDMOSFET is formed and the region AR2 in which the thin film piezoelectric bulk wave resonator BAW is formed. As a result, the heat mainly generated by the LDMOSFET is efficiently dissipated in all directions by the high thermal conductivity film HCF formed on the entire surface of the semiconductor substrate 1S. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022120025-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742824-B2 |
priorityDate |
2011-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |