Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_20d3042eb4ea7c9afd525aa89373349d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0233 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L2205-02 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D161-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L71-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G8-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G8-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G8-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L61-06 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L71-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
filingDate |
2012-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc6d567b5e7dd22989a26793719407f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_045a9c929c5d5675909232f9215024ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87b99267f268944f21d923986e01fb50 |
publicationDate |
2014-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20140007808-A |
titleOfInvention |
Positive photoresist composition, coating film thereof and novolac phenolic resin |
abstract |
The present invention is to provide a novolak-type phenol resin (B) 3 to 80 to 100 parts by mass of the cresol novolak resin (A) for the purpose of providing a positive photoresist composition excellent in developability and heat resistance and a coating film using the same. In positive type photoresist composition containing a mass part, resin (B) is Formula (1). [Wherein, R is a hydrogen atom or a hydrocarbon group having 1 to 12 carbon atoms. X is equation (2) (In formula, R < 1> , R < 2> , R < 3> is respectively independently a hydrogen atom and a C1-C8 alkyl group. M and n are each independently the integer of 1-4, p is 0-4 And t is an aromatic hydrocarbon group (x2) other than the structure (x1) represented by 1 or 2) or the structure (x1)]. The positive photoresist composition which has a structural unit represented by the above as a repeating unit, and whose content rate of the said structure (x1) with respect to the total number of structure (x1) and structure (x2) is 85% or more. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160135163-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170104441-A |
priorityDate |
2011-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |