| abstract |
Disclosed are a semiconductor device, a transistor, and a method of manufacturing the same. In one embodiment, a semiconductor device includes a gate dielectric disposed over a workpiece, a gate disposed over the gate dielectric, and a spacer disposed over the sidewalls of the gate and gate dielectric. The source region is disposed near the spacer on the first side of the gate and the drain region is disposed near the spacer on the second side of the gate. A metal layer is disposed over the source region and the drain region. The metal layer extends below the spacer by about 25% or more than the width of the spacer. |