http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130142415-A

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filingDate 2012-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17fb11e9fd2d8059ada4412e1f0d09eb
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publicationDate 2013-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130142415-A
titleOfInvention Gallium nitride based semiconductor device and manufacturing method
abstract According to an embodiment of the present invention, a substrate, a nucleus growth layer provided on the substrate and formed of 3C-SiC, an SiC insertion layer formed on the nuclear growth layer and composed of 4H-SiC or 6H-SiC and the SiC insertion A semiconductor device including a gallium nitride based semiconductor layer provided on a layer can be provided.
priorityDate 2012-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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