http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130140663-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C7-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2013-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130140663-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | In a transistor in which an oxide semiconductor film is used for a channel formation region, variations in electrical characteristics due to a short channel effect are suppressed and a semiconductor device can be miniaturized. Moreover, the semiconductor device which improved the on-current is provided. An oxide semiconductor film having a pair of second oxide semiconductor regions that are amorphous regions and a first oxide semiconductor region sandwiched between the pair of second oxide semiconductor regions, a first oxide semiconductor region via a gate insulating film and a gate insulating film In a semiconductor device having a gate electrode provided above, at least one element selected from Group 15 elements such as nitrogen, phosphorus, and arsenic is added to the second oxide semiconductor region. |
| priorityDate | 2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.