| abstract |
Provided are a dielectric thin film, a dielectric thin film element, and a thin film capacitor capable of reducing leakage current. The thin film capacitor 1 includes a substrate 10 and a dielectric thin film element 16 formed on the substrate 10. The substrate 10 is formed of an Si plate 2, an SiO 2 film 4 formed on the Si plate 2, and a Ti film 6 formed on the SiO 2 film 4. The dielectric thin film element 16 includes a lower electrode 8, a dielectric thin film 12 formed on the lower electrode 8, and an upper electrode 14 formed on the dielectric thin film 12. The dielectric thin film 12 is a thin film composed of nanosheets, and is filled with a p-type conductive organic polymer in the gap portion of the dielectric thin film 12. A dielectric that is a main component of the nano-sheet has been used include Ti 0 .87 O 2, or Ca 2 Nb 3 O 10. As the p-type conductive organic polymer, polypyrrole, polyaniline, polyethylenedioxythiophene, or the like is suitable. |