| abstract |
Use of a chemical mechanical polishing (CMP) composition comprising: for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or mixtures thereof: (A) inorganic particles, organic particles, or mixtures thereof, (B) heteropoly acid or salt thereof, (C) salts comprising chloride, fluoride, bromide, or mixtures thereof as an anion, and (D) aqueous medium. |