| abstract |
Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer having a dopant source comprising a dopant, and driving a portion of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer includes introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions of forming an adsorption limiting layer, and forming a dopant source. And reacting the adsorbed dopant precursor. Further, apparatuses for doping a substrate may include a controller having a reaction chamber, a gas inlet, and a machine readable code, the controller instructions for operating the gas inlet to introduce and adsorb a dopant precursor, and Disclosed herein are devices for doping the substrate, including instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source. |