http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130120652-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb40703bec0d8f0ddc615f6658108b6c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 |
| filingDate | 2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c62bf5fdf76202e027572cf884f58cc |
| publicationDate | 2013-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130120652-A |
| titleOfInvention | Non-Peroxide Copper Etching Agent |
| abstract | The present invention relates to an etching agent for etching a copper used as a conductive film of an electronic device comprising a non-hydrogen peroxide type copper etchant, particularly a display, a semiconductor, etc., comprising 1.5 to 5.0% by weight of copper sulfate heptahydrate or copper sulfate heptahydrate; 1. 5 to 5.0% by weight of ammonium persulfate; 0.2 to 2.0% by weight of ammonia water; And a remaining amount of water. The etching agent of the present invention is a composition capable of etching a copper film without using hydrogen peroxide as an oxidizing agent. It effectively etches the Cu film by the mutual exchange of ions of the Cu ions and the Cu metal film, minimizes the side etching, Adjust the etch rate of the film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113897612-A |
| priorityDate | 2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.