| abstract |
The present invention is to reduce the content of oxygen vacancies in a semiconductor device using an oxide semiconductor, and to improve electrical characteristics in a semiconductor device using an oxide semiconductor, and includes a gate electrode and a gate electrode formed on a substrate. A first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes on a transistor having a gate insulating film overlying, an oxide semiconductor film overlapping the gate electrode via the gate insulating film, and a pair of electrodes in contact with the oxide semiconductor film; And a second insulating film covering the first insulating film, wherein the first insulating film has a etching rate of 10 nm / min or less at 0.5 ° C by weight of hydrofluoric acid at 25 ° C., and is slower than that of the second insulating film. It features. |