http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130115847-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5ad8562c578b061df7a2c3aee9d0e24 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82B3-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate | 2012-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbd5545dc1ccbfa59e2a5c4384b305ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_050745ab362c05c5fa612694e6207ee9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_352fd85cf93df29629de1a3f64d24646 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ecc879cf41ea473e049812565bfb543 |
| publicationDate | 2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130115847-A |
| titleOfInvention | Tungsten Carbide of 2D Nanostructure and Manufacturing Method Thereof |
| abstract | According to the present invention, tungsten carbide of two-dimensional nanostructures capable of synthesizing various types of tungsten carbides, particularly nanowall tungsten carbides, is controlled by controlling the supersaturation level during growth of tungsten carbides. And a method of manufacturing the two-dimensional nanostructured tungsten carbide according to the present invention using a chemical vapor deposition process in which hydrogen plasma is applied, the two-dimensional nanostructured tungsten on the nanocrystalline diamond thin film. Characterized in that the carbide is produced, the chemical vapor deposition process, the hydrogen plasma is applied, comprising a substrate having a nanocrystalline diamond thin film formed on the anode in the chamber, the surface of the tungsten cathode carbonized on the surface of the substrate spaced apart With the hydrogen plasma in the chamber It is. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018093178-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10697073-B2 |
| priorityDate | 2012-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.