http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130115183-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-351 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate | 2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_702609ebfc399356f2547a89dc59d2bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2937252f79e0754cd96165e9310d2a53 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a1e079a6172babee08844ecbabbf0b7 |
| publicationDate | 2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130115183-A |
| titleOfInvention | Electronic material film forming apparatus |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic material film forming apparatus. In particular, in the process of forming an electronic material film through sputtering on a substrate having a substrate or a functional layer formed thereon, the charged particles that damage the electronic material film do not reach the substrate. The present invention relates to an electronic material film forming apparatus capable of forming an electronic material film having good electrical / material properties on a substrate at room temperature by accelerated passage of process gas ions for blocking and maximizing activation of the electronic material film. The constituent means of the electronic material film forming apparatus of the present invention includes a chamber in which a sputtering process is performed, a sputtering means fixedly disposed on one surface of the chamber, and mounted on an inner surface of the chamber, and an inner surface of the chamber in which the sputtering means is disposed; It is disposed on the opposite surface, the holding means for mounting the object on which the electronic material film is formed, disposed between the sputtering means and the holding means, the magnetic field in a direction perpendicular to the direction of movement of ions and electrons generated in the sputtering process It is characterized by comprising a limiter for generating. |
| priorityDate | 2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.