http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130115097-A

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publicationDate 2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130115097-A
titleOfInvention Method for Damage-Free Junction Formation
abstract Embodiments of this doping method are used to improve junction formation. Injection paper, such as helium or other rare gas, is injected to the first depth 204. Dopants are deposited on the workpiece. During annealing, the dopant diffuses to the first depth. Rare gas ions amorphousize at least a portion of the workpiece during implantation. The workpiece can be flat or non-planar. Injection and deposition take place in the system without breaking the vacuum.
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