http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130114983-A

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filingDate 2012-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eda495d14d4e1bd2252f5dbbb883230
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publicationDate 2013-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130114983-A
titleOfInvention Semiconductor device with DC structure
abstract A semiconductor device is described that includes an interlayer insulating layer formed on a substrate and a DC structure vertically penetrating the interlayer insulating layer to contact the substrate. The DC structure includes a DC hole exposing the substrate, an insulating DC spacer formed on an inner wall of the DC hole, and a conductive DC plug formed on the DC spacer to fill the DC hole. The DC plug includes a lower horizontal DC plug and a relatively wide horizontal DC plug.
priorityDate 2012-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.