| abstract |
The present invention relates to a heterojunction solar cell and a method for manufacturing the same. Specifically, n-type single crystal silicon is grown on an n-type silicon wafer by epitaxial growth to produce a thin film, and an intrinsic silicon layer on one side of the thin film, The silicon layer, the transparent electrode layer, and the electrode were sequentially stacked, and then the entire layer was attached to the glass substrate, and then the n-type wafer was separated, and in the state of being rotated, the intrinsic silicon layer, the silicon layer, and the transparent layer were formed on the other side of the thin film. The present invention relates to a heterojunction solar cell and a method for manufacturing the same, which have a silicon epi thin film that simplifies the process by forming the electrode layer and the electrode in a sequential manner and simplifies the process by forming only the deposition process. |