Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00a421ab71bd49a451d0a49d23a082c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_986d0ab29fa7910a46cd21a12d682fe4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48de1cfdc993735cdc1c82f96827b33e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2011-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93160d454be607bc5a63185c0b2b5b19 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_877b761b68f1094a9fd075f64c447d41 |
publicationDate |
2013-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20130112854-A |
titleOfInvention |
Method of manufacturing thin film transistors and transistor circuits |
abstract |
The present invention relates to a method for manufacturing a structure such as a transistor, the method comprising: a. Providing a continuous metal layer on an insulating substrate; b. Providing a dielectric layer on the continuous metal layer, thereby forming a continuous dielectric layer on top of the continuous metal layer; And c. Patterning the metal layer and the dielectric layer, wherein the patterning comprises a wet etching step using an etchant that etches the metal layer substantially faster than the dielectric layer, wherein step (c) comprises: b) afterwards. The invention further relates to the structures obtained thereby. |
priorityDate |
2010-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |