http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130112854-A

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filingDate 2011-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93160d454be607bc5a63185c0b2b5b19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_877b761b68f1094a9fd075f64c447d41
publicationDate 2013-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130112854-A
titleOfInvention Method of manufacturing thin film transistors and transistor circuits
abstract The present invention relates to a method for manufacturing a structure such as a transistor, the method comprising: a. Providing a continuous metal layer on an insulating substrate; b. Providing a dielectric layer on the continuous metal layer, thereby forming a continuous dielectric layer on top of the continuous metal layer; And c. Patterning the metal layer and the dielectric layer, wherein the patterning comprises a wet etching step using an etchant that etches the metal layer substantially faster than the dielectric layer, wherein step (c) comprises: b) afterwards. The invention further relates to the structures obtained thereby.
priorityDate 2010-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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