Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03H9-02031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-10516 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N15-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-018 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-8554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B17-62 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B17-62 |
filingDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ea96810768ba69da4b8c196b10e1724 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_39484a3a19f976aec5b46fadbba446af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa2efe94f15665e7ce236a1cb8145541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8bf49d5b78bfca08a668c2efced2ed1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1103cd29377753b30f25157ad64afcbf |
publicationDate |
2013-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20130111305-A |
titleOfInvention |
PZT-based ferroelectric thin film and its manufacturing method |
abstract |
(Problem) Provided is a PZT-based ferroelectric thin film having a dielectric property equivalent to that of a conventional ferroelectric thin film and having higher lifetime reliability and a method of manufacturing the same. (Measures) In a PZT-based ferroelectric thin film formed on a lower electrode of a substrate having a lower electrode oriented in the (111) axial direction, the ferroelectric thin film is formed on the lower electrode and preferentially has a (111) plane. And a film thickness adjusting layer formed on the alignment control layer and having the same crystal orientation as that of the alignment control layer, wherein the layer thickness in which the crystal orientation is controlled is within the range of 45 nm to 270 nm. The interface is formed between the orientation control layer and the film thickness adjustment layer. |
priorityDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |