| abstract |
As a pattern formation method that satisfies high sensitivity, high resolution, excellent roughness performance, and excellent dry etching resistance simultaneously, and also has excellent development time dependence, (A) a fullerene derivative having (A) an acid-decomposable group, and (B) active light or A developing solution comprising a step of forming a film by a compound that generates an acid by irradiation of radiation and a chemically amplified resist composition containing (C) a solvent, (b) exposing the film, and (c) an organic solvent. It provides a negative pattern forming method including the step of developing using. |