| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2013-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f317110a1c4e0ac835fcf72d5f74bce6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ace5e66a38b35b8135525e9108574d3a |
| publicationDate |
2013-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130108181-A |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium |
| abstract |
Thereby suppressing the generation of foreign matter in the processing container. Comprising the steps of: transporting a substrate into a processing vessel; supplying a source gas containing a predetermined element and a halogen element to a processing vessel containing the substrate to form a thin film on the substrate; A step of supplying an oxygen-containing gas and a hydrogen-containing gas into a heated processing vessel under a pressure lower than atmospheric pressure in a state where the substrate is subjected to a first reforming treatment with respect to the by- Containing gas and a hydrogen-containing gas are supplied into a heated processing vessel under a pressure lower than atmospheric pressure in a state in which the substrate is not present in the processing vessel, And subjecting the product to a second reforming treatment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180120593-A |
| priorityDate |
2012-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |