| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2013-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cf1ece880582fe73c6f7a6cc623e89c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_474c932f8beca75a8562f0bb1ff6ab4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c87a654bcbfbbbfc4ac5b550953e79e |
| publicationDate |
2013-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130107232-A |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus and recording medium |
| abstract |
The present invention reduces the total supply amount of the reaction gas without lowering the concentration of oxygen, nitrogen, carbon, etc. contained in the thin film. A step of forming a thin film on the substrate by performing a predetermined number of cycles including a step of supplying source gas to the substrate in the processing chamber and a step of supplying reaction gas to the substrate in the processing chamber, and supplying source gas In at least one of the step of supplying the reaction gas and the step of supplying the reaction gas, the gas used in the step of the source gas and the reaction gas is selected from the source gas and the reaction gas while the exhaust gas in the processing chamber is stopped until the pressure in the processing chamber becomes a predetermined pressure. A first supply step of supplying at a flow rate; And a second flow rate in which the gas used in the step of the raw material gas and the reactive gas in the process is smaller than the first flow rate while the pressure in the process chamber reaches a predetermined pressure and the exhaust gas in the process chamber is maintained while maintaining the pressure in the process chamber at the predetermined pressure. A second supply process for supplying to the. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170083518-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10066298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180005305-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9890458-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11028473-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200141935-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950457-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811271-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9934960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200070430-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200067809-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160012086-A |
| priorityDate |
2012-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |