| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e8d6d46c7439444f2ee053109f024e5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b3103ada7ef29d7d133685144044b9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e15ae9296499c8ff1da160b2461b0e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_369d5bcfbff1b4200920cb009dae0f19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a0d926703b47d90a8938a843d4f7281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ec4cff1a71adeaae95ef1883a2ac46e |
| publicationDate |
2013-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130104504-A |
| titleOfInvention |
Insulating film material for semiconductor device and manufacturing method of insulating film using same |
| abstract |
The present invention relates to an insulating film material for a semiconductor device containing a cyclosiloxane and a method for producing an insulating film using the same. The insulating film material for a semiconductor device including a cyclosiloxane according to the present invention can be suitably used as an insulating film of a highly integrated semiconductor device due to its excellent mechanical properties and high dielectric properties and can be manufactured through a low temperature process and thus can be applied to a flexible semiconductor device There are advantages. |
| priorityDate |
2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |