| abstract |
According to the present invention, each gate of a driver TFT and a load TFT unit device structure constituting an inverter when implementing an enhancement-load type and depletion-load type inverter implemented using only one type of semiconductor, n-type or p-type, is implemented. When the same input voltage (Vin) is applied by varying the thickness of the insulating film, the electrical characteristics of the two thin film transistor elements are generated by using the difference of the electric field effect caused by the different gate insulating film thickness, and the inverter characteristics are used by using the same. Is to implement. |