| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3327 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-354
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-503
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 |
| filingDate |
2011-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64baacc8cdd5502de2395182a64219eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_225d29b9fe85897fb9a1200790ecc33a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0d054b2a1e5fb7c6bc4ba7a505bf386 |
| publicationDate |
2013-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130093612-A |
| titleOfInvention |
How to deposit metal in high aspect ratio features |
| abstract |
Provided herein are methods for depositing metal in high aspect ratio features formed on a substrate. In some embodiments, a method includes applying a first RF power at a VHF frequency to a target comprising a metal disposed over a substrate to form a plasma; Applying DC power to the target to direct the plasma towards the target; Maintaining a pressure in the PVD chamber sufficient to ionize a major portion of the metal atoms while sputtering the metal atoms from the target using the plasma; Depositing a first plurality of metal atoms on a bottom side of the opening and on a first side of the substrate; Applying second RF power to redistribute at least some of the first plurality of metal atoms from the bottom surface to the lower portions of the sidewalls of the opening; And depositing a second plurality of metal atoms on top of the sidewalls by reducing the amount of ionized metal atoms in the PVD chamber, wherein the first and second plurality of metal atoms are substantially in the opening. Form a first layer deposited on all sides. |
| priorityDate |
2010-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |