http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130093103-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2011-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94879ef4d212a86d39c2a2c1e747f063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_548ecd265f2c8fb64247bec29de2f574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e36c0bb049be2b5f3146ba9beb908a8c |
| publicationDate | 2013-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130093103-A |
| titleOfInvention | Oxidation Enrichment Liner Layer for Flowable CD Gap Fill |
| abstract | Formation of a gap-filled silicon oxide layer with reduced volume fraction of voids is disclosed. Deposition includes forming an oxygen-rich rich-flowing liner layer prior to the oxygen-poor large-flowing gapfill layer. However, the liner layer is deposited in the same chamber as the gap fill layer. Both the liner layer and the gapfill layer may be formed by mixing the radical component with a silicon-containing precursor that is not excited (ie, not directly excited by the application of plasma power). The liner layer has more oxygen content than the gap fill layer and is deposited more conformally. The deposition rate of the gap fill layer may be accelerated by the presence of the liner layer. The gapfill layer may include silicon, oxygen, and nitrogen and may be converted to include more oxygen and less nitrogen at high temperatures. The presence of the gapfill liner provides an oxygen source under the gapfill layer to increase the gaseous oxygen introduced during the conversion. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476419-B2 |
| priorityDate | 2010-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.