| abstract |
An object of the present invention is to provide a copper plating technique capable of filling high aspect ratio via holes, through holes, and the like for substrates such as silicon substrates for semiconductors, organic material substrates, ceramic substrates, and the like. The said technique is the copper plating containing the tertiary amine compound obtained by making a heterocyclic compound react with the epoxy group of the glycidyl ether group of the compound which has three or more glycidyl ether groups, its quaternary compound, and these compounds Additives, copper plating bath, copper plating method. |