| abstract |
According to the present invention, a nitride-based light emitting diode and a method of manufacturing the same include a substrate, a GaN layer formed on the substrate, and n-type Al x Ga y In z N (0 ≦ x, y, z ≦ 1) on the GaN layer. An n-type lower contact layer having an optical waveguide structure, and formed on the n-type lower contact layer and composed of n-type Al x Ga y In z N (0≤x, y, z≤1) An active layer, a p-type upper contact layer formed on top of the active layer and composed of p-type Al x Ga y In z N (0≤x, y, z≤1), an exposed region on the n-type lower contact layer An n-type electrode formed on the; And a p-type electrode formed on the p-type upper contact layer. |