| abstract |
Disclosed are a method of three-dimensionally integrating elements such as individual cut dies or wafers, and an integrated structure having elements connected to each other such as individual cut dies or wafers. Each or both of the die and the wafer are provided with a semiconductor device. A first device having a first contact structure is bonded to a second device having a second contact structure. The first and second contact structures may be formed of a metal material selected from tungsten, nickel, gold or alloys thereof. A via may be formed in the first device to expose at least the first contact structure, and a conductive material may be formed in the via to be connected to at least the first contact structure. The first device may be bonded to the second device to directly connect the first contact structure and one of the first contact structure and the conductive material to the second contact structure. The first and second devices may be heated to a temperature below 400 ° C. to increase the pressure between the first and second contact structures. |