http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130086305-A

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filingDate 2013-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7739b51872c39f2f93d9d6ea03f46bc
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publicationDate 2013-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130086305-A
titleOfInvention Method for determining surface contamination of polycrystalline silicon
abstract According to the present invention, a) providing two polycrystalline silicon rods by deposition in a Siemens reactor; b) immediately after the deposition, determining a degree of contamination of the first of the two rods; c) guiding the second rod through at least one system for further processing the polycrystalline silicon rod to obtain a rod piece or polysilicon fragment, optionally cleaning, storing or packaging d) then determining the contamination level of the second rod Lt; / RTI &gt; A method of determining surface contamination of polycrystalline silicon is provided, wherein the difference in contamination determined in the first rod and the second rod provides the surface contamination of polycrystalline silicon resulting from the system and the system environment.
priorityDate 2012-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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