| abstract |
A high electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. The disclosed HEMT may include a channel supply layer and a channel layer, and the channel layer may have an effective channel region and a high resistance region. The effective channel region may be provided between the high resistance region and the channel supply layer. The high resistance region may be a region in which impurities are ion implanted. The disclosed method of manufacturing a HEMT includes forming a device unit including a channel layer, a channel supply layer, and the like on a first substrate, attaching a second substrate to the device unit, removing the first substrate, and And implanting impurities into at least a portion of the channel layer to form a high resistance region. |