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filingDate 2012-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c44014836506d8df84489b20a185c62f
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publicationDate 2013-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20130080300-A
titleOfInvention Light emitting element
abstract Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system. A light emitting device according to an embodiment includes a first conductive semiconductor layer; An active layer including a quantum well and a quantum wall and positioned on the first conductivity type semiconductor layer; An electron blocking layer on the active layer; And a second conductivity type semiconductor layer on the electron blocking layer, wherein the electron blocking layer has an energy band gap equal to or greater than an energy band gap of the quantum wall and is directed from the active layer to the second conductivity type semiconductor layer. A first electron blocking layer, the energy bandgap of which gradually decreases; And a second electron blocking layer having an energy band gap greater than or equal to the energy band gap of the quantum wall on the first electron blocking layer and gradually increasing the energy band gap.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150116274-A
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