patent/KR-20130078210-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130078210-A

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
filingDate	2011-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fb1b2d142a6fb366f015ce69ac424a8
publicationDate	2013-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	KR-20130078210-A
titleOfInvention	Semiconductor device and manufacturing method thereof
abstract	According to the present invention, after forming the buried gate region, the nitride layer spacer is formed on the sidewall of the buried gate region, but the spacer of the active region is etched to leave the spacer in the device isolation region. Provided are a semiconductor device and a method of manufacturing the same, in which shorts do not occur.
priorityDate	2011-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

Total number of triples: 21.