| abstract |
The present invention selectively removes the silicon nitride film used as a cutting film for semiconductor devices, flat panel displays, etc., and improves the selectivity and stability of the nitride film and the oxide film even in long-term high temperature process use. It relates to a wet etchant composition of the silicon nitride film to obtain a selectivity. The wet etching liquid composition of the silicon nitride film according to the present invention is capable of selective etching of the silicon oxide film and the silicon nitride film when the silicon nitride film and the silicon oxide layer are laminated or mixed at the same time, and the particles generated in the conventional method of adding silicic acid and silicate This does not occur to ensure the stability and reliability of the process can be effectively applied in the manufacture of semiconductor devices that require selective etching of the silicon nitride film. |