http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130074703-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2011-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ddcf57b5d9c613fd31cc9b6db89106a |
| publicationDate | 2013-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130074703-A |
| titleOfInvention | Deposition apparatus and deposition method |
| abstract | Silicon carbide deposition apparatus according to the embodiment, the chamber including a gas inlet and gas outlet; A susceptor disposed in the chamber and containing a wafer; And a first reaction gas supply line and a second reaction gas supply line for supplying a reaction gas into the chamber, wherein a distance between the first reaction gas supply line and the wafer is between the second reaction gas supply line and the wafer. Longer than the distance of the second reaction gas supply line supplies SiHCl x gas into the chamber. Silicon carbide deposition method according to the embodiment, the step of supplying the reaction gas into the chamber through the first reaction gas supply line and the second reaction gas supply line; The reaction gas forming an intermediate compound; And reacting the intermediate compound with a wafer located in the chamber to deposit a silicon carbide epi layer, wherein the first reaction gas supply line and the second reaction gas supply line are connected to each other, and the first reaction. The distance between the gas supply line and the wafer is longer than the distance between the second reaction gas supply line and the wafer, the second reaction gas supply line supplies SiHCl x gas into the chamber, and the second reaction gas supply line Silver includes a heating member. |
| priorityDate | 2011-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.