http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130071415-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5858f3a8fd92eec55e7647eb2c9f8992 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0078 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0635 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3464 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 |
| filingDate | 2011-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb6af559699046ee5b755397e544251b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bf0c74ea56213fae3351d40f59d9651 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b69feb64c09dd5af615c91874d8afa88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ac92f60194bcd422c1013e9d031ff59 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fac83d1c1dd501f10acdd4c39f5ab7f |
| publicationDate | 2013-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130071415-A |
| titleOfInvention | Film deposition method of silicon carbide thin film |
| abstract | Provided is a film forming method capable of forming a silicon carbide thin film having high transmittance and film strength, which can be used for optical purposes in a short time, safely and even on a substrate having low heat resistance. In the method of the present invention, the reaction process region 60 and the film formation process regions 20 and 40 are spatially separated from each other in the vacuum vessel 11 so that the processing in each region 20, 40, 60 is independent. As a method of forming a thin film of silicon carbide on a moving substrate S by using the film forming apparatus 1 configured to be controllable, the silicon target 29a is formed in the region 20 under an atmosphere of an inert gas. , 29b is sputtered, and the carbon targets 49a and 49b are sputtered in the region 40. As a result, an intermediate thin film containing silicon and carbon is formed on the substrate S. FIG. Next, in the region 60, the plasma generated in the atmosphere of the mixed gas of inert gas and hydrogen is exposed to the intermediate thin film, and the intermediate thin film is converted into an ultra thin film. Thereafter, the formation of the intermediate thin film and the film conversion to the ultra thin film are repeated for the ultra thin film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200125499-A |
| priorityDate | 2011-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.