http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130070943-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f548962093d468be111a5afcea9d1c3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate | 2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73ae9c16d9d970989aea1dd8e1198c3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c1d2eb0d0d428553e3402d3ea96452a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04f2bb729add025101cd6668505da81a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9b5e603407d6c1e7a1e5e2f383d7761 |
| publicationDate | 2013-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130070943-A |
| titleOfInvention | Etching solution of silicon nitride film |
| abstract | The present invention relates to an etching solution for selectively etching a silicon nitride film, and more particularly, to a silicon nitride film used in a semiconductor manufacturing process, such as a shallow trench isolation (STI) and a gate electrode forming process of a DRAM and a NAND flash memory. Alternatively to an etching solution used for wet etching. The etching solution of the present invention includes a phosphoric acid, a silicon oxide film etch inhibitor and water, or a phosphoric acid, a silicon oxide film etch inhibitor, a silicon nitride film etch increasing agent, and water, and selectively etch the silicon nitride film in a pattern including the silicon nitride film and the silicon oxide film. can do. By using the new silicon oxide etch inhibitor, the silicon nitride layer can be selectively etched without lowering the etching rate of the silicon nitride layer, and the etching selectivity can be much higher than that by etching with phosphoric acid. In addition, when the silicon oxide film etch inhibitor and the silicon nitride film etch increasing agent are used together, the etching rate of the silicon oxide film and the etching rate of the silicon nitride film can be increased simultaneously to obtain both productivity and selectivity. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10465112-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180066332-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111961472-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111961472-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9868902-B2 |
| priorityDate | 2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.