| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2203-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13394
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133345 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2011-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a573ef6c456478ce2ffc150bbcce9f7d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2fe75a0d2e464a33d9fd0623d9f0e7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac11ee1c1f0f829494971d06f1517a7a |
| publicationDate |
2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130070641-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
One object of the present invention is to provide a semiconductor device including an oxide semiconductor that includes stable electrical properties and high reliability. Another object is to manufacture highly reliable semiconductor devices with high yields. In a staggered transistor having a top gate structure including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by using a film forming gas containing silicon fluoride and oxygen by plasma CVD. As the second gate insulating film laminated on the first gate insulating film, a silicon oxide film is formed by using a film forming gas containing silicon hydride and oxygen by plasma CVD. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9722056-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150098699-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9478664-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9698274-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10050132-B2 |
| priorityDate |
2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |