http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130069426-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate | 2012-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b240077b94d3e009a7ab327371166123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b04f145a825bd3cf3a4a4e6acea78f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7f7320ba519f17fe783d3e7346b6f9d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a6417c733f391adb9743a3708f94efe |
publicationDate | 2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20130069426-A |
titleOfInvention | Method of manufacturing thick film photoresist pattern |
abstract | (Problem) Provided is a method for producing a thick film photoresist pattern in which bubbles are suppressed. (Solution means) A lamination step of laminating a thick film photoresist layer made of a thick film chemically amplified positive photoresist composition on a support, an exposure step of irradiating the thick film photoresist layer with actinic light or radiation, and the above-mentioned after exposure And a developing step of developing a thick film photoresist layer to obtain a thick film photoresist pattern, wherein the chemically amplified positive photoresist composition for thick films comprises an acid generator (A) that generates an acid by irradiation with actinic light or radiation; And a resin (B) having increased solubility in alkali due to the action of an acid and an organic solvent (S), wherein the organic solvent (S) has a boiling point of 150 ° C. or higher at atmospheric pressure and a contact angle with respect to the silicon substrate. It contains 40 mass% or more of this organic solvent which is 18 degrees or less in all the organic solvents. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180132900-A |
priorityDate | 2011-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 425.