http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130067148-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-36 |
| filingDate | 2011-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17323325080eacd5af10c289d5b0614b |
| publicationDate | 2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130067148-A |
| titleOfInvention | Light emitting device, light emitting device package and light unit |
| abstract | The light emitting device according to the embodiment includes a first semiconductor layer of a first conductivity type, a first active layer under the first semiconductor layer of the first conductivity type, and a second semiconductor layer of a second conductivity type under the first active layer. A first light emitting structure comprising; A first reflective electrode under the first light emitting structure; A second light emitting structure comprising a third semiconductor layer of a first conductivity type, a second active layer under the third conductive layer of the first conductivity type, and a fourth semiconductor layer of a second conductivity type under the second active layer; A second reflecting electrode under the second light emitting structure; An insulating metal oxide layer disposed under the second reflective electrode and insulating the first reflective electrode and the second reflective electrode; A contact unit electrically connected to the first semiconductor layer of the first conductivity type and the second reflective electrode; . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10535804-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017014580-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9985172-B2 |
| priorityDate | 2011-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.