http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130065095-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| filingDate | 2011-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ee2c19be9b3a487edc2fb07780ba0fe |
| publicationDate | 2013-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20130065095-A |
| titleOfInvention | Light emitting element |
| abstract | The embodiment may include a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and An electron blocking layer disposed between the active layer and the second conductive semiconductor layer, wherein the electron blocking layer includes at least one first horizontal transport layer, and the at least one first horizontal transport layer has a composition of AlN. A first layer, a second layer having a composition of GaN, and a third layer having a composition of Al x Ga (1-x) N (0 <x <1). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9520535-B2 |
| priorityDate | 2011-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.