| abstract |
A method of fabricating nanostructures is provided that includes applying a thin random discontinuous masking layer 105 to a major surface 103 of a substrate 101 by plasma chemical vapor deposition. Substrate 101 may be a polymer, an inorganic material, an alloy, or a solid solution. Masking layer 105 may include a reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyls, metal isopropoxides, metal acetylacetonates, and metal halides. Can be. Subsequently, the portion 107 of the substrate 101 that is not protected by the masking layer 105 is etched by reactive ion etching to produce a nanostructure. |